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| FMB1020 Discrete Power & Signal Technologies FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " (dot) signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at collector currents to 300mA. Sourced from Process 10 (NPN ) and Process 68 (PNP). Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current TA = 25C unless otherwise noted Value 45 60 6 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristics Total Device Dissipation, total per side Thermal Resistance, Junction to Ambient, total Max 700 350 180 Units mW C/W (c) 1998 Fairchild Semiconductor Corporation Page 1 of 2 FMB1020.lwpPr10&68(Y4) FMB1020 NPN & PNP Complementary Dual Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO ICES IEBO Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Ic = 1.0 mA Ic = 10 uA Ie = 10 uA Vcb = 50 V Vce = 40 V Veb = 4 V 45 60 6 50 50 50 V V V nA nA nA ON CHARACTERISTICS hFE DC Current Gain Vce = Vce = Vce = Vce = 1V, 1V, 1V, 5V, Ic = 100uA Ic = 10mA Ic = 100mA Ic = 150mA 80 100 100 100 450 350 0.2 0.4 0.85 1.0 TYP 4.5 300 2.5 V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Ic = 10mA, Ib = 1mA Ic = 200mA, Ib = 20mA Base-Emitter Saturation Voltage Ic = 10mA, Ib = 1mA Ic = 200mA, Ib = 20mA SMALL SIGNAL CHARACTERISTICS Output Capacitance COB fT NF Current Gain - Bandwidth Product Noise Figure Vcb = 10V, f = 1MHz Vce = 20V, Ic = 20mA, f = 100MHz Vce = 5V, Ic = 100uA, Rs = 2kohms, f = 1 kHz pF MHz dB (c) 1998 Fairchild Semiconductor Corporation Page 2 of 2 FMB1020.lwpPr10&68(Y4) |
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